8-beam bridge-type silicon acceleration sensor and the fabricati

Details 8-beam bridge-type silicon acceleration sensor and the fabricati 8-beam bridge-type silicon acceleration sensor and the fabricati

1994-12-23

1996-03-19

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 1566621, 216 2, 216 99, 7351434, H01L 2100

Patent

active

055000789

ABSTRACT:
A method for fabricating an 8-beam bridge-type silicon acceleration sensor omprises the steps of: growing a silicon oxide layer on the top surface of the silicon substrate; forming an n.sup.+ diffusion region in the substrate by successively performing the process of opening a diffusion window in the silicon oxide layer, implanting n.sup.+ impurities in the silicon substrate through the diffusion window, and evenly diffusing the n.sup.+ impurities into the substrate; removing the silicon oxide layer, and then growing an epitaxial layer thereon; forming a plurality of piezo-resistors in the epitaxial layer by successively performing the process of growing an oxide layer on the epitaxial layer, implanting impurities, and then evenly diffusing the impurities; removing the silicon oxide layer; forming a porous silicon layer from the n.sup.+ diffusion region by performing an anodic reaction in HF solution; loading a mass on the epitaxial layer; and, forming an air-gap in the substrate by etching the porous silicon layer.

REFERENCES:
patent: 4744863 (1988-05-01), Guckel et al.
patent: 5332469 (1994-07-01), Motamedi

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