5T high density NVDRAM cell

Details 5T high density NVDRAM cell 5T high density NVDRAM cell

2007-12-31

2011-10-11

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185250, C365S072000, C365S154000

Reexamination Certificate

active

08036032

ABSTRACT:
A memory circuit includes a high voltage region providing storage of a nonvolatile bit, and a low voltage region providing at least partial storage of a volatile bit. The high and low voltage regions are isolated from one another and formed by a plurality of transistors in series between a current source and a bit line.

REFERENCES:
patent: 3636530 (1972-01-01), Mark et al.
patent: 3676717 (1972-07-01), Lockwood
patent: 3811076 (1974-05-01), Smith
patent: 3846768 (1974-11-01), Krick
patent: 3950737 (1976-04-01), Uchida et al.
patent: 4044343 (1977-08-01), Uchida
patent: 4103344 (1978-07-01), Fagan et al.
patent: 4103348 (1978-07-01), Fagan
patent: 4112507 (1978-09-01), White et al.
patent: 4128773 (1978-12-01), Troutman et al.
patent: 4132904 (1979-01-01), Harari
patent: 4138737 (1979-02-01), McCann
patent: 4271487 (1981-06-01), Craycraft et al.
patent: 4342101 (1982-07-01), Edwards
patent: 4354255 (1982-10-01), Stewart
patent: 4449205 (1984-05-01), Hoffman
patent: 4611309 (1986-09-01), Chuang et al.
patent: 4701858 (1987-10-01), Stokes et al.
patent: 4769787 (1988-09-01), Furusawa et al.
patent: 4799194 (1989-01-01), Arakawa
patent: 4800533 (1989-01-01), Arakawa
patent: 4858185 (1989-08-01), Kowshik et al.
patent: 4931997 (1990-06-01), Mitsuishi et al.
patent: 5043946 (1991-08-01), Yamauchi et al.
patent: 5065362 (1991-11-01), Herdt et al.
patent: 5111257 (1992-05-01), Andoh et al.
patent: 5140551 (1992-08-01), Chiu
patent: 5168334 (1992-12-01), Mitchell et al.
patent: 5189641 (1993-02-01), Arakawa
patent: 5262986 (1993-11-01), Yamauchi
patent: 5283764 (1994-02-01), Kim et al.
patent: 5287319 (1994-02-01), Fukumoto
patent: 5353248 (1994-10-01), Gupta
patent: 5387534 (1995-02-01), Prall
patent: 5424569 (1995-06-01), Prall
patent: 5426605 (1995-06-01), Van Berkel et al.
patent: 5436480 (1995-07-01), Yu
patent: 5440508 (1995-08-01), Pathak et al.
patent: 5467300 (1995-11-01), Komarek et al.
patent: 5485429 (1996-01-01), Ono
patent: 5488579 (1996-01-01), Sharma et al.
patent: 5496756 (1996-03-01), Sharma et al.
patent: 5506816 (1996-04-01), Hirose et al.
patent: 5510638 (1996-04-01), Lancaster et al.
patent: 5511020 (1996-04-01), Hu et al.
patent: 5602776 (1997-02-01), Herdt et al.
patent: 5617357 (1997-04-01), Haddad et al.
patent: 5638323 (1997-06-01), Itano
patent: 5644533 (1997-07-01), Lancaster et al.
patent: 5656837 (1997-08-01), Lancaster et al.
patent: 5760644 (1998-06-01), Lancaster et al.
patent: 5768208 (1998-06-01), Bruwer et al.
patent: 5774400 (1998-06-01), Lancaster et al.
patent: 5789776 (1998-08-01), Lancaster et al.
patent: 5864499 (1999-01-01), Roohparvar et al.
patent: 5892712 (1999-04-01), Hirose et al.
patent: 6026018 (2000-02-01), Herdt
patent: 6122191 (2000-09-01), Hirose et al.
patent: 6141248 (2000-10-01), Forbes et al.
patent: 6172907 (2001-01-01), Jenne
patent: 6222765 (2001-04-01), Nojima
patent: 6285586 (2001-09-01), Lung et al.
patent: 6414873 (2002-07-01), Herdt
patent: 6532169 (2003-03-01), Mann et al.
patent: 6556487 (2003-04-01), Ratnakumar et al.
patent: 6674665 (2004-01-01), Mann et al.
patent: 2004/0145024 (2004-07-01), Chen et al.
patent: 2006/0023503 (2006-02-01), Lee
patent: 6136994 (1998-07-01), None
patent: WO 95/30244 (1995-11-01), None
patent: WO 97/15929 (1997-05-01), None
International Search Report of the International Searching Authority, dated Feb. 18, 2009 for International Application No. PCT/US08/87795; 2 pages.
International Written Opinion of the International Searching Authority, dated Feb. 18, 2009 for International Application No. PCT/US08/87795; 5 pages.
USPTO Notice of Allowance for U.S. Appl. No. 09/681,317 dated Mar. 13, 2002; 4 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 09/681,317 dated Jul. 24, 2001; 9 pages.
Herdt et al., “Analysis, Measurement, and Simulation of Dynamic Write Inhibit in a nvSRAM Cell,” 1992, IEEE; 6 pages.
USPTO Notice of Allowance for U.S. Appl. No. 09/871,172 dated Dec. 13, 2002; 4 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 09/871,172 dated Jul. 22, 2002; 6 pages.
USPTO Notice of Allowance for U.S. Appl. No. 07/361,033 dated Apr. 30, 1991; 3 pages.
USPTO Final Rejection for U.S. Appl. No. 07/361,033 dated Jan. 18, 1991; 5 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 07/361,033 dated Jun. 12, 1990; 11 pages.
USPTO Notice of Allowance for U.S. Appl. No. 08/549,483 dated Aug. 8, 1996; 3 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 08/549,483 dated May 29, 1996; 5 pages.
USPTO Notice of Allowance for U.S. Appl. No. 08/846,558 dated Jul. 20, 1998; 3 pages.
USPTO Notice of Allowance for U.S. Appl. No. 09/426,100 dated Jul. 19, 2000; 4 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 09/426,100 dated Mar. 10, 2000; 7 pages.
USPTO Notice of Allowance for U.S. Appl. No. 09/136,694 dated Apr. 24, 2000; 4 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 09/136,694 dated Nov. 12, 1999; 8 pages.
USPTO Notice of Allowance for U.S. Appl. No. 09/626,267 dated Aug. 7, 2001; 5 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 09/626,267 dated Mar. 28, 2001; 5 pages.
USPTO Requirement for Restriction/Election for U.S. Appl. No. 09/626,267 dated Dec. 1, 2000; 4 pages.
USPTO Notice of Allowance for U.S. Appl. No. 09/137,914 dated Oct. 29, 1999; 1 page.
USPTO Non-Final Rejection for U.S. Appl. No. 09/137,914 dated Jun. 9, 1999; 4 pages.
“nvSRAM Basics,” Simtek 1999 Data Book, Chapter 8; 8-1 through 8-5; 5 pages.
USPTO Notice of Allowance for U.S. Appl. No. 07/361,033 dated Apr. 30, 1991; 4 pages.
USPTO Final Rejection for U.S. Appl. No. 07/361,033 dated Jan. 18, 1991; 5 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 07/361,033 dated Jun. 12, 1990; 11 pages.
USPTO Notice of Allowance for U.S. Appl. No. 08/234,288 dated Oct. 2, 1995; 1 page.
USPTO Final Rejection for U.S. Appl. No. 08/234,288 dated May 31, 1995; 3 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 08/234,288 dated Oct. 6, 1994; 2 pages.
USPTO Notice of Allowance for U.S. Appl. No. 08/715,569 dated Aug. 19, 1997; 1 page.
USPTO Notice of Allowance for U.S. Appl. No. 08/735,973 dated Nov. 21, 1997; 3 pages.
Svensson et al., “Trap-Assisted Charge Injection in MNOS Structures,” Oct. 1973, J. Appl. Phys., vol. 44, No. 10; 7 pages.
Lundstrom et al., “Properties of MNOS Structures,” Jun. 1972, IEEE Transactions on Electron Devices, vol. Ed-19, No. 6; 11 pages.
Takahashi et al., “Estimation of Insulation Layer Conductance in MNOS Structure,” Nov. 1993, IEEE ransactions on Electron Devices, vol. 40, No. 11; 5 pages.
USPTO Notice of Allowance for U.S. Appl. No. 09/892,164 dated Oct. 17, 2002; 4 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 09/892,164 dated Jun. 27, 2002; 6 pages.
USPTO Notice of Allowance for U.S. Appl. No. 10/368,528 dated Aug. 21, 2003; 4 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 10/368,528 dated May 20, 2003; 8 pages.

Affiliated with

Also associated with

Rating

5T high density NVDRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with 5T high density NVDRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and 5T high density NVDRAM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4263993