Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2001-12-31
2002-11-19
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S156000, C365S230060
Reexamination Certificate
active
06483739
ABSTRACT:
BACKGROUND AND SUMMARY OF THE INVENTION
The present invention relates to integrated circuit structures and fabrication methods, particularly to storage cells.
BACKGROUND
Loadless SRAMs have been an important recent development in memory technology. Like conventional 4T or 6T SRAMs, loadless SRAMs include a “latch” (a cross-coupled pair of driver transistors) whose state corresponds to the stored data; but conventional SRAMs must have a load of some sort to maintain the state of the latch. (In a conventional 4T SRAM cell the load is provided by a special high-impedance element, which complicates fabrication; in a conventional 6T SRAM cell the load is provided by another pair of cross-coupled transistors, of opposite type to the driver transistors.) Loadless SRAMs do not have any such load: instead, the data state is maintained merely by leakage current through the pass transistors.
To maintain the data state, the leakage current into the high node must be greater than the leakage current through the driver transistor which connects the high node to ground. Actually, to maintain the data state, the leakage into and out of the high storage node must balance at a high enough storage node voltage to maintain the high node voltage higher than the low node voltage with the cross-coupling, with allowance for variation in transistor characteristics and the possibility of noise coupling.
4T Memory with Boost of Stored Voltage Between Standby and Active
Advantages of the disclosed methods and structures, in various embodiments, can include one or more of the following:
lower standby power consumption.
REFERENCES:
patent: 5453949 (1995-09-01), Wiedmann et al.
patent: 5583821 (1996-12-01), Rose et al.
Brady III W. James
Hoang Huan
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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