3-grid neutral beam source used for etching semiconductor...

Details 3-grid neutral beam source used for etching semiconductor... 3-grid neutral beam source used for etching semiconductor...

2005-08-23

2005-08-23

Berman, Jack I. (Department: 2881)

Radiant energy

Electrically neutral molecular or atomic beam devices and...

Reexamination Certificate

active

06933495

ABSTRACT:
Disclosed is a 3-grid neutral beam source used for etching a semiconductor device. The 3-grid neutral beam source includes a plasma generating chamber, a grid assembly including first to third grids, which are sequentially overlapped with each other by interposing an insulation material therebetween for obtaining a great amount of ion flux at a low ion energy, and a reflective member for converting an ion beam into a neutral beam by reflecting the ion beam. The semiconductor device is prevented from being damaged due to reduced kinetic energy of ions, and an etch rate of the semiconductor device is improved.

REFERENCES:
patent: 4775789 (1988-10-01), Albridge et al.
patent: 2002/0033446 (2002-03-01), Ichimura et al.
patent: 2004/0016876 (2004-01-01), Yeom et al.
Korean Patent Abstracts, KO-10-2002-092482 (Dec. 12, 2002), 2 pp., Abstract only.
Korean Patent Abstracts, KO-10-2003-042958 (Jun. 2, 2003) 2 pp., Abstract only.

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