Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2011-06-14
2011-06-14
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C438S109000, C257SE21614, C257SE25006
Reexamination Certificate
active
07960844
ABSTRACT:
Disclosed are a flash memory device and method of operation. The flash memory device includes a bottom memory cell array and a top memory cell array disposed over the bottom memory cell array. The bottom memory cell array includes a bottom semiconductor layer, a bottom well, and a plurality of bottom memory cell units. The top memory cell array includes a top semiconductor layer, a top well, and a plurality of top memory cell units. A well bias line is disposed over the top memory cell array and includes a bottom well bias line and a top well bias line, The bottom well bias line is electrically connected to the bottom well, and the top well bias line is electrically connected to the top well.
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Jang Young-Chul
Jeong Jae-Hun
Jung Soon-moon
Kim Han-soo
Hoang Quoc D
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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