Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-28
2010-10-12
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S108000, C438S612000, C438S614000, C438S652000, C438S660000, C438S661000, C438S674000, C257S737000, C257S738000, C257S778000, C257S779000, C257S780000, C257S797000, C257SE23069, C257SE23179
Reexamination Certificate
active
07811932
ABSTRACT:
A die-on-die assembly has a first die (10) and a second die (50). The first die (10) has a first contact extension (28,42) and a peg (32,44,45) extending a first height above the first die. The second die (50) has a second contact extension (68) connected to the first contact extension and has a containing feature (62) extending a second height above the second die surrounding the peg. The peg extends past the containing feature. Because the peg extends past the containing feature, lateral movement between the first and second die can cause the peg to come in contact with and be constrained by the containing feature. The peg and containing feature are thus useful in constraining movement between the first and second die.
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PCT Application No. PCT/US2008/086174 International Search Report and Written Opinion dated Jun. 22, 2009.
Chatterjee Ritwik
Pozder Scott K.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Monbleau Davienne
Rodela Eduardo A
Vo Kim-Marie
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