3-D CMOS transistors with high ESD reliability

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257351, 257 69, H01L 2976

Patent

active

061216623

ABSTRACT:
The present invention discloses a structure for 3-D transistors with high electrostatic discharge (ESD) reliability. The 3-D transistors are fabricated on a substrate. The substrate has several recess portions and silicon islands. Several buried oxide regions are formed in the silicon islands and upper portions of the silicon islands are isolated from the substrate by the buried oxide regions. Then, a gate oxide layer is formed on the substrate. The upper portions of the silicon islands are enclosed by the gate oxide layer and the buried oxide region. A gate structure is defined on each of the recess portions and silicon islands. Two N-type source/drain regions are defined in each of the silicon islands adjacent to each of the gates on the silicon islands. Two P-type source/draid regions are fabricated in each of the recess portions adjacent to each of the gates on the recess portion. Spacers are defined on the sidewalls of the gates and abutting to the gates. Therefore, PMOS transistors are fabricated on silicon-on-insulator regions and NMOS transistors are defined on the recess portions of the substrate.

REFERENCES:
patent: 4754314 (1988-06-01), Scott et al.
patent: 5326991 (1994-07-01), Takasu
patent: 5847419 (1998-12-01), Imai et al.
patent: 5869872 (1999-02-01), Asai et al.
patent: 5886385 (1999-03-01), Arisumi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

3-D CMOS transistors with high ESD reliability does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with 3-D CMOS transistors with high ESD reliability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and 3-D CMOS transistors with high ESD reliability will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1076040

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.