3-D CMOS-on-SOI ESD structure and method

Details 3-D CMOS-on-SOI ESD structure and method 3-D CMOS-on-SOI ESD structure and method

1997-04-04

1999-07-13

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257351, 257357, 257360, 257361, 257362, H01L 2701, H01L 2712, H01L 310392

Patent

active

059230673

ABSTRACT:
Three-dimensional ESD structures are constructed in SOI technology that utilize both bulk devices and thin film SOI devices.

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