Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-13
2010-11-16
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257SE29130, C257SE29201
Reexamination Certificate
active
07834395
ABSTRACT:
A field-effect transistor includes a source region, a drain region and a channel region between the source and the drain region. A gate electrode is also arranged between them, where a lower edge of the gate electrode is formed below a lower edge of at least one of the source and drain regions. A first insulator structure is provided between the gate electrode and the source region. A second insulator structure is provided between the gate electrode and the drain region. The first and the second insulator structures are formed asymmetric and may be adapted to different requirements. The asymmetric approach may provide longer transistor channels, a lower resistance of the gate electrode and smaller footprints for 3D-channel-transistors of, for example, array and support transistors in memory cells or power applications.
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Sieck Alexander
Temmler Dietmar
Edell Shapiro & Finnan LLC
Monbleau Davienne
Qimonda AG
Rodela Eduardo A
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