Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-11
2005-01-11
Thompson, Craig A. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000
Reexamination Certificate
active
06841833
ABSTRACT:
A drain loaded 1T1R resistive memory device and 1T1R resistive memory array are provided. The resistive memory array comprises an array of drain loaded 1T1R resistive memory device structures. Word lines are connected across transistor gates, while a resistive elements are connected between transistor gates and bit lines. The resistive element comprises a material with a resistance that is changed electrically, for example using a sequence of electric pulses. The resistive element may comprise PCMO.
REFERENCES:
patent: 3838405 (1974-09-01), Arnett et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
Harai, Masahiko “Ferromagnetic Memory and its Information Reproducing Method” JP2002140889A (abstract only) Japanese Abstract May 17, 2002.*
Article entitled, “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”, by S.Q. Liu et al., published in Applied Physics Letters, vol. 76, No. 19, 8 May 8, 2000, pp 2749-2751.
Hsu Sheng Teng
Zhuang Wei-Wei
Curtin Joseph P.
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
Thompson Craig A.
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