193nm resist with improved post-exposure properties

Details 193nm resist with improved post-exposure properties 193nm resist with improved post-exposure properties

2006-08-08

2006-08-08

Lee, Sin (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S326000, C430S311000, C430S313000, C430S330000, C430S317000, C430S905000, C430S907000, C430S910000, C430S914000

Reexamination Certificate

active

07087356

ABSTRACT:
Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.

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