193 nm positive-working photoresist composition

Details 193 nm positive-working photoresist composition 193 nm positive-working photoresist composition

1998-06-11

2000-05-09

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430326, 525450, G03C 1492, C08F 2000

Patent

active

060602120

ABSTRACT:
A polymer that when used with a suitable photoacid generator (PAG) forms a positive working photoresist. The polymer comprises of a tartaric polyanhydride backbone, an acetal protected 1,2 diol group; and a fused ring acetal group pendant to the backbone. The acetal protected .alpha.-hydroxy anhydride backbone structure, undergoes an efficient photoacid catalyzed cleavage, which gives rise to small molecular weight fragments which are readily dissolved in an aqueous base developer. This high contrast in solubility allows high resolution images to be produced. The fused rings offer etch resistance and can be comprised of either an adamantone or norcamphor ring structure. With the addition of a commercially available photo acid generator, the polymer formulation forms a positive working photoresist that offers high contrast and resolution.

REFERENCES:
patent: 5474872 (1995-12-01), Torno et al.
patent: 5585223 (1996-12-01), Frechet et al.
R.P. Meagly et al, "A New Approach to 193 nm Photoresists: Polyspironorbornane Polymers", Proceedings Of SPIE, Advances In Resist Technology and Processing XV, vol. 3333, No. 1, Feb. 19989 (1998-02), pp. 83-90.
Chemical Amplification in the Design of Dry Developing Resist Materials, I. Hiroshi et al, vol. 23, No. 18 (Dec., 1983) 1012-1018.
Impact of 2-Methyl-2-Adamantyl Group Used for 193-nm Single-Layer Resist, S. Takechi et al, vol. 9, No. 3 (1996) 475-488.

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