1/f noise reduction in heterojunction bipolar transistors

Details 1/f noise reduction in heterojunction bipolar transistors 1/f noise reduction in heterojunction bipolar transistors

1992-12-31

1994-03-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 437133, 148DIG72, 148DIG11, H01L 21265

Patent

active

052984397

ABSTRACT:
A method of making a transistor comprising the steps of providing a structure having a collector layer 3, a base layer 5, and an emitter layer 7, one atop the other, forming a contact 9 on the emitter layer, removing a portion of the emitter layer to leave a relatively thick mesa region 13 with the contact thereon, a surrounding relatively thin ledge region 11 and an exposed portion of the base layer 5 and forming a contact on the exposed portion of the base layer 5. The emitter layer 7 is preferably GaInP, and preferably Ga.sub.x In.sub.1-x P, wherein x is in the range of approximately 0.50 to 0.52, and the base 5 is preferably GaAs. The ledge portion 11 has a thickness of about 700 Angstroms.

REFERENCES:
patent: 4889831 (1989-12-01), Ishii et al.
patent: 5106766 (1992-04-01), Lunardi et al.
patent: 5171697 (1992-12-01), Liu et al.
patent: 5208184 (1993-05-01), Bayraktaroglu
Liu, "Microwave and D.C. Studies of Npn and Pnp AlGaAs/GaAs Heterojunction Bipolar Transistors", doctoral dissertation, Stanford Electronics Lab., Stanford Univ., Stanford, Conn., 1991.
Lee et al., "Effect of Emitter-Base Spacing on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors", IEEE Electron Device Letters, vol. 10, No. 5, May 1989, pp. 200-202.

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