GaN-based devices using thick (Ga, Al, In)N base layers

Metal treatment – Barrier layer stock material – p-n type – Having at least three contiguous layers of semiconductive...

Reexamination Certificate


  [ 0.00 ] – not rated yet Voters 0   Comments 0

Please leave your Comment & Rating

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.