Magnetic random access memory with a reference memory array

Details Magnetic random access memory with a reference memory array Magnetic random access memory with a reference memory array

1998-12-18

2000-04-25

Elms, Richard T.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, G11C 1100

Patent

active

06055178&

ABSTRACT:
An MRAM device (4) includes a memory array and a reference memory array (75). The memory array arranges magnetic memory cells (41, 42) in rows and columns for storing information, and the reference memory array forms reference memory cells (70, 71) for holding a reference information in a row line. The magnetic memory cell has a maximum resistance (R+.DELTA.R) and a minimum resistance (R) according to magnetic states in the cell. Each reference memory cell has a magnetic memory cell (70, 71) and a transistor (72, 73), which are coupled in series and have a reference resistance across the reference memory cell and the transistor. The transistor is controlled by a reference row line control (74), so as for the reference resistance to show a mid-value between the maximum resistance and the minimum resistance of the magnetic memory cell. A bit line current (Ib) and a reference bit current (Ir) are provided to the magnetic memory cell and the reference memory cell, respectively. Magnetic states alternates the bit line current, which is compared to the reference bit current to provide an output.

REFERENCES:
patent: 5349302 (1994-09-01), Cooper
patent: 5699293 (1997-12-01), Tehrani et al.

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