SOI device with double gate and method for fabricating the same

Details SOI device with double gate and method for fabricating the same SOI device with double gate and method for fabricating the same

1999-12-22

2000-12-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257247, 257365, H01L 2976, H01L 2701, H01L 2712, H01L 310392

Patent

active

06166412&

ABSTRACT:
A silicon-on-insulator (SOI) device having a double gate, comprising: a supporting substrate; a first insulating layer formed over the supporting substrate; a first silicon layer formed over the first insulating layer, the first silicon layer including a first impurity region of a first conductivity disposed in a central portion thereof and intrinsic regions disposed at the both sides of the first impurity region; a second insulating layer formed over the first silicon layer; a second silicon layer formed over the second insulating layer, the second silicon layer including a second impurity region of a second conductivity disposed in a central portion thereof and third impurity regions of first conductivities disposed at the both sides of the second impurity region; a third insulating layer formed over the second impurity region; and a polysilicon layer doped with impurity ions of first conductivities, formed over the third insulating layer.

REFERENCES:
patent: 5183771 (1993-02-01), Mitsui et al.
patent: 5506436 (1996-04-01), Hayashi et al.
patent: 5674758 (1997-10-01), McCarthy
patent: 6043535 (2000-03-01), Houston

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