Semiconductor memory device having means for repairing the memor

Details Semiconductor memory device having means for repairing the memor Semiconductor memory device having means for repairing the memor

1991-01-24

1991-10-15

Clawson, Jr., Joseph E.

Static information storage and retrieval

Read/write circuit

Bad bit

365125, 371 102, G11C 2900

Patent

active

050580710

ABSTRACT:
A memory cell array (100) of an EPROM includes a first data memory region (1a), a second data memory region (1b), a 2M code memory line (2a) and a 1M code memory line (2b). When both the first and the second data memory regions (1a, 1b) are normal, the EPROM may be used as a 2M bit EPROM, in which case a device code indicating that the EPROM is a 2M bit EPROM is read out from the 2M code memory line (2a). When a defective portion is present in one of the first and the second data memory regions (1a, 1b), the EPROM may be used as a 1M bit EPROM, in which case a device code indicating that the EPROM is a 1M bit EPROM is read out from the 1M code memory line (2b).

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