Method of fabricating self-aligned contact

Details Method of fabricating self-aligned contact Method of fabricating self-aligned contact

1998-11-25

2000-12-26

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438653, 438659, 438584, H01L 21336

Patent

active

061659010

ABSTRACT:
A method of fabricating a self-aligned contact forms at least a gate and a source/drain region on a substrate, wherein a cap layer is formed on top of the gate. First spacers are formed on sidewalls of the gate. Second spacers are formed to cover the first spacers and the source/drain region. A dielectric layer having an opening is formed over the substrate. A portion of the second spacers is exposed by the opening. The second spacers exposed by the opening are removed to form a concave region. The source/drain region is exposed by the concave region. A plug that can be electrically coupled to the source/drain region is formed in the opening and the concave region.

REFERENCES:
patent: 5899722 (1999-05-01), Huang

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