Method of fabricating dual cylindrical capacitor

Details Method of fabricating dual cylindrical capacitor Method of fabricating dual cylindrical capacitor

1998-10-30

2000-12-26

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, H01L 2120

Patent

active

061658650

ABSTRACT:
A method of forming a dual cylindrical capacitor on a semiconductor substrate having at least a device isolation structure and a transistor thereon is provided, wherein the transistor includes at least a gate and a source/drain region. A first insulation layer and a second insulation layer are formed on the substrate. An opening comprising an lower part penetrating through the first insulation layer and an upper part penetrating through the second insulation layer is formed to expose the source/drain region. A conductive layer is formed on the second insulation layer to fill the lower part of the opening and to cover a surface of the upper part of the opening. A spacer is formed on a part of the conductive layer on a side wall of the larger opening. A conductive spacer is formed on the spacer. The spacer is removed.

REFERENCES:
patent: 5126280 (1992-06-01), Chan et al.
patent: 5604146 (1997-02-01), Tseng
patent: 5759888 (1998-06-01), Wang et al.
patent: 5821139 (1996-10-01), Tseng
patent: 5861675 (1997-12-01), Sasaski et al.
patent: 5869382 (1997-06-01), Kubota

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