Silicon carbide semiconductor device and method of manufacturing

Details Silicon carbide semiconductor device and method of manufacturing Silicon carbide semiconductor device and method of manufacturing

1999-01-04

2000-12-26

Elms, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

438167, 438197, 438404, 438414, H01L 21335, H01L 21338

Patent

active

061658227

ABSTRACT:
A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1.times.10.sup.15 cm.sup.-3. Accordingly, when a gate oxide film is formed on the surface channel layer, an amount of silicon nitride produced in the gate oxide film and at the interface between the gate oxide film and the surface channel layer becomes extremely small. As a result, carrier traps are prevented from being produced by silicon nitride, resulting in stable FET characteristics and high reliability to the gate oxide film.

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