Semiconductor device, and method of manufacturing same

Details Semiconductor device, and method of manufacturing same Semiconductor device, and method of manufacturing same

1998-06-22

2000-04-25

Everhart, C.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438421, 438422, 438619, H01L 21441

Patent

active

060543817

ABSTRACT:
The present invention is a semiconductor device having a plurality of wiring on a semiconductor substrate. It is provided with a first insulating film which covers the surface of all the aforesaid wiring, and a second insulating film containing air gaps which is formed between such of the aforesaid wiring as is mutually adjacent.
The method of manufacturing the semiconductor device to which the present invention pertains comprises a process whereby the first insulating film is formed in such a manner as to cover the surface of the plurality of wiring formed on the semiconductor substrate, and a process whereby the second insulating film containing air gaps is formed between such of the wiring on the aforesaid substrate as is mutually adjacent. Here, the first insulating film is formed by means of the plasma CVD or spin coating methods, the second by means of the plasma CVD, spin coating, bias CVD, sputtering or similar methods.

REFERENCES:
patent: 5468685 (1995-11-01), Orisaka et al.
patent: 5728631 (1998-03-01), Wang
patent: 5783481 (1998-07-01), Brennan et al.
patent: 5837618 (1998-11-01), Avanzino et al.

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