Semiconductor memory device having reverse base current bipolar

Details Semiconductor memory device having reverse base current bipolar Semiconductor memory device having reverse base current bipolar

1993-12-20

1995-06-06

Harvey, Jack B.

Static information storage and retrieval

Systems using particular element

Semiconductive

365177, 365178, 3652256, 257591, 257592, G11C 1134, H01L 2972

Patent

active

054228417

ABSTRACT:
A semiconductor memory device, which has a memory cell comprising the following transistors: a transistor for selecting; and a bipolar transistor for memorizing, which has a base region whose base concentration as either lower than an ordinary base concentration or higher than an ordinary base concentration and which is constructed so as to generate a reverse base current.

REFERENCES:
patent: 4089022 (1978-05-01), Asai et al.
patent: 4217688 (1980-08-01), Ipri
patent: 4258379 (1981-03-01), Watanabe et al.
patent: 4260430 (1981-04-01), Itoh et al.
patent: 4550491 (1985-11-01), Depey
patent: 4599635 (1986-07-01), Itoh et al.
patent: 5038191 (1991-08-01), Hasegawa et al.
patent: 5060194 (1991-10-01), Sakui et al.
Sakui, K. et al. A New Static Memory Cell Based on Reverse Base Current (RBC) Effect of Bipolar Transistor; International Electrical Devices Meeting Dec. 1988 pp. 44-47.

Affiliated with

Also associated with

Rating

Semiconductor memory device having reverse base current bipolar does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having reverse base current bipolar , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having reverse base current bipolar will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-992510