Ferroelectric memory using ferroelectric reference cells

Details Ferroelectric memory using ferroelectric reference cells Ferroelectric memory using ferroelectric reference cells

1997-03-27

1998-05-12

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365210, G11C 1122

Patent

active

057516260

ABSTRACT:
A random access memory circuit is described which uses single ferroelectric memory cells to store data. The ferroelectric memory cells can be selectively read using reference cells to generate a reference voltage which is compared to a voltage representative of data stored on the memory cell using a multiplexed sense amplifier. In using two ferroelectric reference cells in which one contains a logical 0 polarization, and the other contains a logical 1 polarization, a single-ended reference voltage can be generated on a reference bit line. A ferroelectric memory cell can then be read by comparing the voltage on its corresponding bit line to the reference bit line using the sense amplifier. The content of the memory cell being read and the content of the reference cells can be rewritten on the same clock cycles to save on access time.

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