Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1990-01-10
1991-10-15
Niebling, John F.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419211, 20419231, 427 62, 505 1, 505816, 505818, 505819, C23C 1400
Patent
active
050572016
ABSTRACT:
This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering of a powder mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by a final sintering of preliminary sintered material at a temperature ranging from 700.degree. to 1,500.degree. C., preferably from 700.degree. to 1,300.degree. C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O.sub.2 containing atmosphere, at a partial pressure of Ar ranging from 1.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr, preferably 5.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr and at a partial pressure of O.sub.2 ranging from 0.5.times.10.sup.-3 to 1.times.10.sup.-1 Torr, preferably 1.0.times.10.sup.-3 to 1.times.10.sup.-1 Torr. The obtained thin film may be further heat-treated at a temperature ranging from 250.degree. C. to 1,700.degree. C., preferably from 250.degree. C. to 1,200.degree. C.
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Fujimori Naoji
Fujita Nobuhiko
Harada Keizo
Itozaki Hideo
Jodai Tetsuji
Marquis Steven P.
Niebling John F.
Sumitomo Electric Industries Ltd.
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