Process for preparing epitaxial II-VI compound semiconductor

Details Process for preparing epitaxial II-VI compound semiconductor Process for preparing epitaxial II-VI compound semiconductor

1989-12-05

1991-10-15

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156611, 156DIG72, 156DIG103, H01L 2922

Patent

active

050571834

ABSTRACT:
An improved process for the production of an epitaxial II-VI compound semiconductor containing sulfur as the VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam in which the sulfur molecular beam is provided from solid sulfur through a specific two-step heating.

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S. Kaneda et al., "Single Crystal Growth of ZnS by the Method of Gas Source MBE", Journal of Crystal Growth, 76 (1986), pp. 440-447.
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M. Kitagawa et al., "Growth of ZnS Bulk Single Crystals and Homoepitaxial Growth of ZnS by Molecular Beam Epitaxy", Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, pp. 247-250.
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