Structure of a mask ROM device on a semiconductor substrate havi

Details Structure of a mask ROM device on a semiconductor substrate havi Structure of a mask ROM device on a semiconductor substrate havi

1998-06-01

2000-09-12

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257437, H01L 27112

Patent

active

061181609

ABSTRACT:
The present invention includes NMOS devices on a NMOS device area and coded NMOS devices on a cell area. Isolation structures are formed between the NMOS devices and between the coded NMOS devices. N conductive type bit lines are formed under first isolation structures. A coding region is formed on the cell area between two coded NMOS devices and under a second isolation structure. Spacers are formed on the side walls of the NMOS devices and the coded NMOS devices and an anti-reflective coating layer is formed on the NMOS devices and the coded NMOS devices.

REFERENCES:
patent: 5329483 (1994-07-01), Wada et al.
patent: 5538906 (1996-07-01), Aoki
patent: 5567970 (1996-10-01), Sheu et al.
patent: 5683925 (1997-11-01), Irani et al.

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