Bipolar transistor circuit having a free collector

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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Details

327432, 327538, G05F 110, H03K 1760

Patent

active

057511837

ABSTRACT:
The present invention relates to a bipolar transistor circuit having a free collector embodied on the chip manufactured by a CMOS manufacturing method. The bipolar transmission circuit comprises first and second bipolar transistors having common collectors and common bases, the common collectors being applied with a first voltage; a transconductor, connected to emitters of the first and second bipolar transistors, for detecting and amplifying an error voltage between first and second emitter voltages received respectively from the emitters of the first and second bipolar transistors; a first MOS transistor, for generating a drain current corresponding to a gate voltage received from the transconductor, the gate of the first MOS transistor being connected to an output of the transconductor, the drain of the first MOS transistor being connected to the emitter of the second bipolar transistor, and the source of the first MOS transistor being connected to a second voltage; and a second MOS transistor for generating a drain current proportional to the drain current of the first MOS transistor, the gate of the second transistor being connected to the output of the transconductor and the source of the second MOS transistor being connected to the second voltage. This bipolar transistor circuit solves the problem of parasitic capacitance without significantly increasing the complexity of the construction of the CMOS device.

REFERENCES:
patent: 4427903 (1984-01-01), Sugimoto
patent: 4675561 (1987-06-01), Bowers
patent: 4714872 (1987-12-01), Traa
patent: 4885477 (1989-12-01), Bird et al.
patent: 5081379 (1992-01-01), Korteling
patent: 5220207 (1993-06-01), Kovalcik et al.

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