Trench gate MOSFET

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257331, 257332, 257341, 257342, H01L 2994

Patent

active

061181498

ABSTRACT:
The present invention discloses a semiconductor device which can be used as a switching element for portable appliances and realize a low breakdown voltage and a low ON resistance. More specifically, the semiconductor device is constructed in such a manner that a semiconductor layer is vertically or laterally sandwiched between gate electrodes through insulation films. In this polycrystalline semiconductor layer, a source region and a drain region are formed in both end portions thereof which contain an impurity at a concentration higher than the concentration in the middle portion thereof, and, in the middle portion, a channel region is formed, whereby carriers can be made to flow throughout the whole channel region.

REFERENCES:
patent: 5796125 (1998-08-01), Matsudai et al.
B. J. Baliga, et al., "The Accumulation-Mode Field-Effect Transistor: A New UltraLow On-Resistance MOSFET," IEEE Electron Device Letters, vol. 13, No. 8, (Aug. 1992), pp. 427-429.
J. P. Colinge, et al., "Silicon-On-Insulator `Gate-All-Around Device`," IEEE IEDM Technical Digest, (1990), pp. 595-598.

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