Semiconductor device provided with LDD transistors

Details Semiconductor device provided with LDD transistors Semiconductor device provided with LDD transistors

1996-09-23

1998-05-12

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

057510350

ABSTRACT:
A semiconductor device is provided with at least one transistor formed on a semiconductor substrate, the transistor being provided with a conductive sidewall spacer, and at least one conductive film formed so as to face a gate of the transistor via an insulative film, the conductive film covering at least an entire region of a gate region of the transistor and acting as a capacitor electrode. The conductive sidewall spacer and the conductive film are connected together. A potential is supplied to the conductive sidewall spacer and the conductive film, the potential being different from a potential of the gate of the transistor.

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