Method of making aluminum alloy wiring with less silicon nodule

Details Method of making aluminum alloy wiring with less silicon nodule Method of making aluminum alloy wiring with less silicon nodule

1996-03-27

1998-05-12

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, 438658, 438661, 438669, 438688, H01L 2128

Patent

active

057504393

ABSTRACT:
After a contact hole is formed in an insulating film covering the surface of a semiconductor substrate, a Ti layer and a TiON (or TiN) layer are sequentially formed on the insulating film. On the TiON layer an Al alloy layer 18 containing Si is formed, and a reflow thermal treatment is performed after or during the formation of the Al alloy layer in order to improve step coverage. During this thermal treatment, Si nodules are generated. After a Ti layer is formed on the reflowed Al alloy layer, an annealing thermal treatment is performed for 120 seconds at a temperature of 450.degree. to 500.degree. C. With this thermal treatment, Si of Si nodules is absorbed in the Ti layer so that Si nodules are reduced or extinguished. After an antireflection TiN (or TiON) layer is formed on the Ti layer, wiring patterns are formed by using resist patterns as a mask. Since Si nodules are extinguished, wiring resistance can be reduced and an etching time can be shortened.

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S. Wolf, "Silicon Processing for the VLSI Era, vol. 2", Lattice Press, p. 128, 1990.

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