Method for fabricating a local interconnection structure

Details Method for fabricating a local interconnection structure Method for fabricating a local interconnection structure

1996-06-04

1998-05-12

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438634, 438643, 438648, 438649, 438720, 438724, H01L 21283, H01L 21306

Patent

active

057504385

ABSTRACT:
A local interconnection structure is disclosed. The local interconnection structure is formed on a silicon substrate in which a polysilicon gate and a number of diffusion regions exist. The structure includes a number of metal silicide layers over the substrate, a metal nitride layer over the silicide layers, and a dielectric layer over the nitride layer. The metal nitride layer which electrically connects the diffusion regions and the gate forms the interconnection. The method for fabricating the interconnection structure includes the steps of preparing the silicon substrate, sputtering a metal layer, annealing to form silicide and the nitride layers, depositing the dielectric layer, and patterning the nitride layer and the metal nitride by covering with a mask, etching away portions of both the dielectric layer and metal nitride layer not covered by the mask, and removing the mask after etching.

REFERENCES:
patent: 4657628 (1987-04-01), Holloway et al.
patent: 4793896 (1988-12-01), Douglas
patent: 4994402 (1991-02-01), Chiu
patent: 5216281 (1993-06-01), Butler
patent: 5420071 (1995-05-01), Burke
patent: 5508212 (1996-04-01), Wang et al.
patent: 5510292 (1996-04-01), Hayashi

Affiliated with

Also associated with

Rating

Method for fabricating a local interconnection structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a local interconnection structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a local interconnection structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-978789