Method of performing a field implant subsequent to field oxide f

Details Method of performing a field implant subsequent to field oxide f Method of performing a field implant subsequent to field oxide f

Filed on

1991-02-13

Date issued

1992-12-22

Examiner

Fourson, George

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437 28, 437 69, 437245, 437924, 148DIG105, H01L 2176

Type

Patent

Status

active

Patent number

051734389

Description

ABSTRACT:
An improved field implant process is disclosed wherein the field implant is performed after the field oxide isolation structure is fabricated by masking the active surface regions of the substrate with tungsten. The tungsten may be selectively deposited or blanket deposited. The energy of the field implant is controlled and adjusted to produce a maximum number of ions contiguous to a thinnest portion of field oxide with other portions being self-regulating.

REFERENCES:
patent: 4679303 (1987-07-01), Chen et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 5010039 (1991-04-01), Ku et al.
S. Sivaran et al. "Measurement and Modelling of Pattern Sensitivity During Chemical Mechanical Polishing of Interlevel Dielectrics" Oct. 8-10, 1991, University of California, Berkeley.
Carter W. Kaanta et al. "Dual Damascene: A ULSI Wiring Technology" 1991.
Wolf, S. et al, Silicon Processing for the VLSI Era, vol. 1, pp. 516 & 532, 1986.
Wolf, S. et al, Silicon Processing for the VLSIERA, vol. 2, pp. 246-252, 1990.
Ghandhi, S., VLSI Fabrication Principles, pp. 352, 1983.

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