Metal oxide semiconductor field effect transistor cell adaptable

Details Metal oxide semiconductor field effect transistor cell adaptable Metal oxide semiconductor field effect transistor cell adaptable

1992-12-08

1995-08-08

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257379, 257380, 257532, 257533, 307109, 307110, 327336, 327581, H01L, H01L 2900, H03K 17687, G06G 718

Patent

active

054401569

ABSTRACT:
A MOSFET wherein cell includes a MOSFET transistor having a gate connected to an input voltage signal for integration, a source grounded through a high resistance, and a drain connected to a power source. An output capacitor is connected to the source of the MOSFET transistor to complete the MOSFET cell.

REFERENCES:
patent: 4967109 (1990-10-01), Steigerwald
patent: 5172018 (1992-12-01), Colandrea et al.
Electronics Handbook, Electronic Society, May 18, 1975, pp. 1703-1704.
Handbook for the Most Use of Analog IC, CQ Publishing Kabushiki Kaisha, Jan. 20, 1992, pp. 135-142.

Affiliated with

Also associated with

Rating

Metal oxide semiconductor field effect transistor cell adaptable does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal oxide semiconductor field effect transistor cell adaptable, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide semiconductor field effect transistor cell adaptable will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-973284