Process for the plasma treatment of the backside of a semiconduc

Details Process for the plasma treatment of the backside of a semiconduc Process for the plasma treatment of the backside of a semiconduc

1989-04-13

1990-10-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437235, 437241, 437242, 437 10, 437239, H01L 2100, H01L 2102, H01L 21318, H01L 2158

Patent

active

049620495

ABSTRACT:
A process is disclosed for the treatment of the backside or back surface of a semiconductor wafer such as a silicon wafer. By spacing the back side of a semiconductor wafer a predetermined distance from a cathode in a vacuum chamber and controlling the rf power and the pressure, a confined plasma may be used both to clean the back side of the wafer to remove impurities, including moisture and other occluded gases; as well as to deposit a layer of oxide on the back surface of the wafer to inhibit subsequent deposition of poorly adherent materials on the back side of the wafer which might otherwise flake off during processing of the front side of the wafer to form integrated circuits thereon.

REFERENCES:
patent: 3907660 (1975-09-01), Gillery
patent: 4113599 (1978-09-01), Gillery
patent: 4300989 (1981-11-01), Chang
patent: 4664938 (1987-05-01), Walker
patent: 4687682 (1987-08-01), Koze
patent: 4692344 (1987-09-01), Kaganowicz et al.
patent: 4736087 (1988-04-01), Whitlock et al.

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