Method of etching semiconductor substrate

Details Method of etching semiconductor substrate Method of etching semiconductor substrate

1991-03-07

1992-12-22

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156626, 156345, 156643, H01L 2100

Patent

active

051731495

ABSTRACT:
To eliminate the influence of fluctuations in etching liquid sorts, composition, density, degradation, temperature, agitation etc., a method of selectively etching a semiconductor substrate having an n-type layer and a p-type layer and immersed in an electrolytic solution comprises the steps of: applying an etching voltage to the n-type layer; integrating etching current flowing through the substrate; if the integrated current value exceeds a reference value required to etch the p-type layer to a predetermined depth, increasing the etching voltage; if the potential of the substrate relative to a reference electrode reaches a predetermined value at which only the p-type layer can be etched, keeping the increased etching voltage at the current level to further etch only the p-type layer; and if the etching current drops sharply due to formation of an anodic oxidation film on the n-type layer, completing the substrate etching.

REFERENCES:
patent: 4621037 (1986-11-01), Kanda et al.
patent: 4995939 (1991-02-01), Ferenczi et al.
"Anodic Dissolution and Selective Etching of Gallium Phosphide"; by Meek et al.; Journal of Elect. Society, 119, No. 9, pp. 1148-1152.

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