Process for fabricating layered superlattice materials and makin

Details Process for fabricating layered superlattice materials and makin Process for fabricating layered superlattice materials and makin

1994-12-05

1995-08-08

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

117 92, 4271263, 437133, 437919, H01L 2915

Patent

active

054398452

ABSTRACT:
A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Prebaking the substrate and oxygen in the RTP and anneal is essential, except for high bismuth content precursors. Excess bismuth between 110% and 140% of stoichiometry and RTP temperature of 725.degree. C. is optimum. The film is formed in two layers, the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor. The electronic properties are so regularly dependent on process parameters and material composition, and such a wide variety of materials are possible, that electronic devices can be designed by selecting from a continuous record of the values of one or more electronic properties as a continuous function of the process parameters and material composition, and utilizing the selected process and material composition to make a device.

REFERENCES:
patent: 4704785 (1989-11-01), Curran
patent: 4830983 (1989-05-01), Thornton
patent: 5191510 (1993-03-01), Huffman
"Process Optimization And Characterization of Device Worthy Sol-Gel Based PET For Ferroelectric Memories," Melnick, et al., Ferroelectrics, 1990. vol. 109. pp. 1-23.

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