Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1994-07-19
1995-08-08
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419213, 20419215, 20429803, 20429807, 20429815, 20429819, 437192, C23C 1434, H01L 2144
Patent
active
054395747
ABSTRACT:
The present invention provides a method for forming thin films successively by magnetron sputtering, a method achieving uniform thickness distribution of each film on a substrate by varying the composition of process gas with the vacuum chamber and a structural configuration therein kept unchanged.
In the magnetron sputtering wherein thin films composed of particles sputtered out of the target [2] are deposited on a substrate surface with plasma maintained by applying perpendicularly intersecting electric and magnetic fields in the space defined between the target and substrate and by introducing process gas into the chamber, the magnetic flux density is varied with the composition ratio of process gas introduced into the vacuum chamber [1] by attaching magnetic field generators [3], [14]: for applying the magnetic field so that the magnetic flux density in the electrode space is adjustable.
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Kobayashi Masahiko
Takahashi Nobuyuki
Anelva Corporation
Nguyen Nam
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