Method of forming a large number of monocrystalline semiconducto

Details Method of forming a large number of monocrystalline semiconducto Method of forming a large number of monocrystalline semiconducto

1984-06-13

1986-08-05

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG73, 156DIG80, 148176, 148DIG3, 148DIG50, 148DIG71, 148DIG74, 148DIG152, 29576T, C30B 1320

Patent

active

046041591

ABSTRACT:
Disclosed is a method of forming a large number of monocrystalline silicon regions, of uniform orientation, on the surface of an insulator material. Initially, a large number of island regions of amorphous or polycrystalline silicon, thermally connected to one another in a predetermined direction by connecting regions, are provided. Then such island regions are sequentially melted and regrown in such predetermined direction so as to form the monocrystalline semiconductor regions, with such regions having a uniform orientation. Thereafter, such connecting regions can be removed in order to isolate the island regions. The connecting regions can be formed with gaps, whereby such connecting regions need not be removed. The connecting regions can be formed of materials having a higher heat conductivity than that of the material of the island regions, and/or the connecting regions can have a smaller cross-sectional area at right angles to the predetermined direction than that of the island regions. Such island regions can be utilized for forming semiconductor elements, such as MOS FETs, therein.

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