Coherent light generators – Particular active media – Semiconductor
Patent
1990-08-31
1992-12-08
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
051704048
ABSTRACT:
Disclosed in a semiconductor laser device for use in a system or apparatus utilizing light for information transmission in optical communication or the like, in which lattice defects or the like are prevented from occurring in the vicinity of a light-emitting active area to thereby reduce a leakage current which substantially makes no contribution to light emission. In order to realize the above semiconductor laser device, a wide gap area for preventing a leakage current is formed to be flat or formed to be spatially apart from the active area.
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IEEE Journal of Quantum Electronics, vol. 25, No. 6, pp. 1362-1368, Jun. 1989.
IEEE Journal of Quantum Electronics, vol. QE-25, No. 6, pp. 1362-1368, June 6, 1989, S. Asada et al.
Journal of Crystal Growth, vol. 27, pp. 118-124, (1974), J. W. Matthews and A. E. Blakeslee, Defects in Epitaxial Multilayers, North Holland Publishing Co.
Heterostructure Materials, Part B, by H. C. Casey and M. B. Panish, pp. 42-47.
Chinone Naoki
Ohtoshi Tsukuru
Sakano Shinji
Sasaki Shinji
Uomi Kazuhisa
Davie James W.
Hitachi , Ltd.
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