Semiconductor memory

Details Semiconductor memory Semiconductor memory

1992-04-07

1992-12-08

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

365186, 365205, G11C 1140

Patent

active

051703742

ABSTRACT:
A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of intersection between the data lines and the word lines. The RAM includes a P-type semiconductor substrate and an N-type well region formed in the substrate. The memory cells are disposed within the well, and the sense amplifier, which is connected to the date lines, is constructed of a pair of N-channel MOSFETs formed in the semiconductor substrate and a pair of P-channel MOSFETs formed in the well region.

REFERENCES:
patent: 4045783 (1977-08-01), Harland
patent: 4169233 (1979-09-01), Harastzl
patent: 4860255 (1989-08-01), Shimohigashi et al.

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