Semiconductor device with local interconnect of metal silicide

Details Semiconductor device with local interconnect of metal silicide Semiconductor device with local interconnect of metal silicide

1999-02-09

2000-12-05

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257383, 257576, 257768, H01L 2900

Patent

active

061570680

ABSTRACT:
A first metal silicide film is formed on an exposed silicon region of a substrate on which the silicon region and an insulating region are exposed. A metal film is deposited over the whole surface of the substrate covering the first metal silicide film, the metal film capable of being silicidized. A silicon film is deposited on the surface of the metal film. The silicon film and metal film are patterned to form a lamination pattern of the silicon film and metal film continuously extending from a partial area of the exposed silicon region to a partial area of the insulating region. The lamination pattern is heated to establish a silicidation reaction and form a second metal silicide layer.

REFERENCES:
patent: 4384301 (1983-05-01), Tasch et al.
patent: 4545116 (1985-10-01), Lau
patent: 4793896 (1988-12-01), Douglas
patent: 4804636 (1989-02-01), Groover, III et al.
patent: 4821085 (1989-04-01), Haken et al.
patent: 4975756 (1990-12-01), Haken et al.
patent: 5216264 (1993-06-01), Fujii et al.
patent: 5346860 (1994-09-01), Wei
patent: 5387535 (1995-02-01), Wilmsmeyer
patent: 5403759 (1995-04-01), Havemann
patent: 5418398 (1995-05-01), Sardella et al.
patent: 5443996 (1995-08-01), Lee et al.
patent: 5635426 (1997-06-01), Hayashi et al.
patent: 5654575 (1997-08-01), Jeng
patent: 5850096 (1998-12-01), Izawa et al.
Murarka, S., et al "Self-Aligned Cobalt Disilicide for Gate and Interconnection and Contracts to Shallow Junctions", IEEEE Trans. Electron Devices, vol. ED-34, No. 10, Oct. 1987, pp. 2108-2115.
Van Houtum, H., et al., "TiSi2 strp formation by Ti-amorphous-Si reaction", J. Vac. Sci Technol. B 6(6), Nov/Dec 1988, pp. 1734-1739.
Bos., A., et al., "Formation of TiSi2 form Titanium and amorphous silicon layers for Local interconnection technology", Thin Solid Films, vol. 197, Nos. 1-2, Mar. 1991, pp. 169-178.

Affiliated with

Also associated with

Rating

Semiconductor device with local interconnect of metal silicide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with local interconnect of metal silicide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with local interconnect of metal silicide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-963961