Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-06-04
1992-12-08
Wojciechowicz, Edward J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
437 41, 437149, 257338, 257900, H01L 2910, H01L 21265
Patent
active
051702320
ABSTRACT:
In a n-channel MOS transistor of LDD structure with sidewall spacers, a p-type diffusion layer is formed to be on the surface of a n.sup.- drain layer just underneath the sidewall spacer and to be separated from the channel region. The low impurity concentration drain layer therefore becomes separated from the sidewall spacer, and thus degradation incident to LDD due to injection of hot carriers into the sidewall spacer can be prevented.
REFERENCES:
patent: 4697333 (1987-10-01), Nakahara
patent: 4823173 (1989-04-01), Beasom
patent: 4949136 (1990-08-01), Jain
IEEE Transactions on Electron Devices, vol. ED-33, No. 11, Nov., 1986, New York US, pp. 1769-1779; Sergio Bampi et al.: "A Modified Lightly Doped Drain Structure for VLSI MOSFETs".
Patents Abstracts of Japan, vol. 10, No. 16 (E-375)(2073) Jan. 22, 1986 & JP-A-60 177677 (Suwa Deikosha K.K.) Sep. 11, 1985 (Computer obtained abstract).
Search Report for European Patent Application No. EP 90 11 6095, Feb. 7, 1991.
International Electron Devices Meeting 1985, Washington, D.C., Dec. 1-4, 1985, pp. 234-237, S. Bampi, et al., "Modified LDD Device Structures for VLSI".
NEC Corporation
Wojciechowicz Edward J.
LandOfFree
MOS field-effect transistor with sidewall spacers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOS field-effect transistor with sidewall spacers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS field-effect transistor with sidewall spacers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-963769