Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-11-26
1999-06-01
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438106, 438613, H01L 2144
Patent
active
059096330
ABSTRACT:
Nickel films 22, 25 are formed on copper pads 21, 24 on a substrate 11, and gold layers 23, 26 are further formed on the nickel films 22, 25. To suppress formation of compound of gold and tin which spoils reliability of soldering, formation of gold layers 23, 26 on the nickel films 22, 25 is effected by very thin substitutional plating method. As a result, a solder bump 17 is formed favorably. Besides, an nickel oxide film 32 formed on the surface of the gold layer 23 is removed by plasma etching. As a result, bonding of wire 15 is also excellent.
REFERENCES:
patent: 5222014 (1993-06-01), Lin
patent: 5723369 (1998-03-01), Barber
patent: 5726079 (1998-03-01), Johnson
patent: 5767008 (1998-06-01), Haji
Haji Hiroshi
Sakemi Shoji
Collins Deven
Matsushita Electric - Industrial Co., Ltd.
Picardat Kevin M.
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