Semiconductor processing methods of forming insulative materials

Details Semiconductor processing methods of forming insulative materials Semiconductor processing methods of forming insulative materials

1998-11-25

2000-12-05

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438255, H01L 21469

Patent

active

061566748

ABSTRACT:
In one aspect, the invention encompasses a semiconductor processing method wherein a first gaseous precursor compound is combined with a second gaseous precursor compound to form a material comprising carbon, silicon and oxygen. A layer of the material is formed over a semiconductive substrate. In another aspect, the invention encompasses another semiconductor processing method. Methylsilane is combined with a form of oxygen other than H.sub.2 O.sub.2 to form an insulative compound comprising silicon bound to CH.sub.3 groups and oxygen. A layer of the insulative compound is formed over a semiconductive substrate. In yet another aspect, the invention encompasses yet another semiconductor processing method. Methylsilane is subjected to a plasma treatment to form a layer over a semiconductive substrate, the layer comprises silicon bound to CH.sub.3 groups. The layer is exposed to oxygen to convert the layer to an insulative compound comprising silicon bound to oxygen as well as the CH.sub.3 groups.

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