Method of forming dielectric thin film pattern and method of for

Details Method of forming dielectric thin film pattern and method of for Method of forming dielectric thin film pattern and method of for

1999-11-19

2000-12-05

Niebling, John F.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438785, 438951, H01L 2131

Patent

active

061566721

ABSTRACT:
A method of forming a dielectric thin film pattern, comprises the steps of: depositing a dielectric thin film on a substrate having a resist pattern thereon by a vapor deposition method, wherein as a material for the dielectric thin film, at least one of CeO.sub.2, Sm.sub.2 O.sub.3, Dy.sub.2 O.sub.3, Y.sub.2 O.sub.3, TiO.sub.2, Al.sub.2 O.sub.3, and MgO is used; and removing the resist pattern whereby the dielectric thin film is patterned.

REFERENCES:
patent: 5190892 (1993-03-01), Sano

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