Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-10-09
2000-12-05
Le, Vu A.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438128, 438598, H01L 2182, H01L 2144
Patent
active
061566527
ABSTRACT:
Large quantities of test MEMS devices are fabricated on a single chip with underlying addressable wiring connections. The wiring contains gaps that can be selectively shorted using a post-process metallization process. Deposition shields are photolithographically incorporated into the MEMS devices during the device fabrication process. These shields contain selected small gaps over certain unconnected wires. Subsequently, simple sputtering or evaporating deposition is used to deposit conductive materials onto the MEMS devices, thereby shorting the unconnected wires. Large quantities of devices can be shorted to active address wires by the metallization process in order of decreasing address potential or by testing preference. As a result, far more devices on a single chip can be individually tested and actuated than the number of bond pads that can be placed around the edge of the chip.
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M. A. Michalicek, J. H. Comtois, and C. C. Barron, "Design and characterization of next-generation micromirrors fabricated in a four-level, planarized, surface-micromachined polysilicon process," Proc. Innovative Systems In Silicon, 2nd Ed., IEEE Press, pp. 144-154, 1997.
M. A. Michalicek, J. H. Comtois, and H. K. Schriner, "Design and fabrication of optical MEMS using a four-level, planarized, surface-micromachined polysilicon5 process," Proc. SPIE, vol. 3276, pp. 48-55, 1998.
Callahan Kenneth E.
Le Vu A.
Pyonin Adam
The United States of America as represented by the Secretary of
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