Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-10
2000-12-05
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438626, 438633, 438675, 438692, H07L 2144, B44C 122
Patent
active
061566519
ABSTRACT:
This is a method of forming mechanically robust vias and entrenched conductors on a dielectric layer (which dielectric layer is on an electronic microcircuit substrate which vias and entrenched conductors are electrically connected to a conductive area on the surface of the substrate) and a structure formed thereby. Generally some of the dielectric layers added above the microcircuit comprise a porous dielectric having a desirable low dielectric constant but low mechanical robustness. Special methods are described which generally comprise: forming the dielectric layer over the substrate; forming a nanaporous dielectric layer over the substrate; depositing a planarizing stopping material over the top surface of said nanaporous dielectric; depositing and patterning photoresist; etching said stopping material and nanaporous dielectric layer in a conductor pattern to expose at least a portion of said conductive area on the surface of said substrate; depositing a wall seal; depositing conductor metal; and planarizing said structure. Generally the via metal and the conductor metal consist essentially of aluminum, copper or combinations thereof. The conductor metal may be doped with the selectively deposited via metal being doped by dopant diffusion from the conductor metal, thereby avoiding the difficulty of depositing a doped selective metal. Methods are shown for realizing desirable insulating and conducting layers without deleterious mechanical effects.
REFERENCES:
patent: 5116463 (1992-05-01), Lin et al.
patent: 5891804 (1999-04-01), Havemann et al.
U.S. application No. 60/047,793, List et al., filed May 28, 1997.
Barrier Metal Free Copper Damascene Interconnection Technology Using Atmospheric Copper Reflow and Nitrogen Doping in SiOF Film, K. Mikagi, et al, USLI Development Laboratories, NEC Corporation, Japan.
Bowers Charles
Kilday Lisa
Lake Rebecca Mapstone
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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