Method of forming uniform sheet resistivity salicide

Details Method of forming uniform sheet resistivity salicide Method of forming uniform sheet resistivity salicide

1998-04-14

2000-12-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438592, 438664, 438683, 438303, H01L 2144, H01L 21336

Patent

active

061566497

ABSTRACT:
A semiconductor process in which a first silicide is formed on silicon upper surfaces upon which a second silicide is selectively deposited. A refractory metal is blanket deposited on a semiconductor substrate. The semiconductor substrate is then heated to a first temperature to react portions of the refractory metal above the exposed silicon surfaces to form a first phase of a first silicide. The unreacted portions of the refractory metal then remove, typically with a wet etch process. The semiconductor substrate is then heated to a second temperature to form a second phase of the first silicide. The second temperature is typically greater than the first, and the resistivity of the second phase is less than a resistivity of the first phase. Thereafter, a second metal silicide is selectively deposited on the first silicide, preferably through the use of a chemical vapor deposition process. In one embodiment, the selectively deposited second silicide is reacted with the existing first silicide to form a composite silicide structure exhibiting uniform sheet resistivity independent of the dimensions of the underlying silicon structure.

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