Semiconductor memory device wherein gate electrode thickness is

Details Semiconductor memory device wherein gate electrode thickness is Semiconductor memory device wherein gate electrode thickness is

1991-06-28

1993-10-26

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, 257413, H01L 2968, H01L 2978, H01L 2992

Patent

active

052568920

ABSTRACT:
An attempt was made to increase the film thickness of at least a portion of word lines over which a storage node electrode of the capacitor for storing charges extends in a DRAM having word lines, bit lines and memory cells comprising one transistor and one stacked capacitor for charge storage. This increases the surface area of the storage node electrode. This also increases the opposing areas of the storage node electrode and the cell plate electrode of the capacitor for storing charges. This invention realizes the increase in the surface area of the storage node electrode without imposing additional burden on processibility.

REFERENCES:
patent: 5025301 (1991-06-01), Shimizu
patent: 5028990 (1991-07-01), Kotaki et al.
patent: 5057449 (1991-10-01), Lowrey et al.

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