Titanium boride gate electrode and interconnect and methods rega

Details Titanium boride gate electrode and interconnect and methods rega Titanium boride gate electrode and interconnect and methods rega

1997-08-22

2000-12-05

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438648, 438656, 438682, 438683, 438685, H01L 213205, H01L 214763

Patent

active

061566306

ABSTRACT:
A method for use in the fabrication of a gate electrode includes providing a gate oxide layer and forming a titanium boride layer on the oxide layer. An insulator cap layer is formed on the titanium boride layer and thereafter, the gate electrode is formed from the titanium boride layer. A barrier layer may be formed on the oxide layer prior to forming the titanium boride layer with the gate electrode being formed from the barrier layer and the titanium boride layer. Further, a polysilicon layer may be formed on the gate oxide layer prior to forming the titanium boride layer with the gate electrode being formed from the titanium boride layer and the polysilicon layer. Yet further, a polysilicon layer may be formed on the gate oxide layer and a barrier layer formed on the polysilicon layer prior to forming the titanium boride layer. The gate electrode is then formed from the polysilicon layer, the barrier layer, and the titanium boride layer. Similar methods can further be used in the formation of interconnects to connect contact regions. Gate electrode structures and interconnect structures resulting from the methods are also described. Further, in such methods and structures, the titanium boride layer may be a titanium diboride layer or a titanium boride layer having silicon incorporated therein.

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